256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

256 x 4 CMOS RAM

Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • This Circuit is Processed in Accordance to MIL-STD-883 and i

文件：143.78 Kbytes 页数：9 Pages

Intersil

8K x 8 Asynchronous CMOS Static RAM

Features • Full CMOS Design • Six Transistor Memory Cell • Low Standby Supply Current . . . . . . . . . . . . . . . 100A • Low Operating Supply Current . . . . . . . . . . . . . . . 20mA • Fast Address Access Time . . . . . . . . . . . . . . . . . .150ns • Low Data Retention Supply Voltage

文件：430.58 Kbytes 页数：8 Pages

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8K x 8 Asynchronous CMOS Static RAM

Description The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642 is ideally suited for use in mi

文件：273.47 Kbytes 页数：11 Pages

Intersil

8K x 8 Asynchronous CMOS Static RAM

Description The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which accommodate a variety of industry standard ROM, PROM, EPROM, EEPROM and RAMs. The HM-65642 is ideally suited for use in mi

文件：273.47 Kbytes 页数：11 Pages

Intersil

2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features • Low Power Standby and

文件：91.67 Kbytes 页数：7 Pages

Intersil

512 x 8 CMOS PROM

The HM-6642/883 is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory in the popular 24 pin, byte wide pinout. Synchronous circuit design techniques combine with CMOS processing to give this device high speed performance with very low power dissipation. Features • This Circuit is Pro

文件：365.88 Kbytes 页数：9 Pages

Intersil

512 x 8 CMOS PROM

Description The HM-6642 is a 512 x 8 CMOS NiCr fusible link Programmable Read Only Memory in the popular 24 pin, byte wide pinout. Synchronous circuit design techniques combine with CMOS processing to give this device high speed performance with very low power dissipation. Features • Low Power

文件：37.76 Kbytes 页数：8 Pages

Intersil