Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive

文件：91.79 Kbytes 页数：7 Pages

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Current Transducer

文件：929.58 Kbytes 页数：12 Pages

LEM

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Current Transducer

文件：1.33861 Mbytes 页数：15 Pages

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Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

文件：82.59 Kbytes 页数：6 Pages

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