Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive

文件：91.79 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Low rDS(on) Small-signal MOSFETs TMOS Single N-channel Field Effect Transistors These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circu

文件：178.93 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Low rDS(on) Small-signal MOSFETs TMOS Single N-channel Field Effect Transistors These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circu

文件：178.93 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

5A 600V 4 circuits Thyristor array

文件：32.42 Kbytes 页数：1 Pages

SANKEN

三垦