Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive

文件：91.43 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET Power Switching

文件：105.14 Kbytes 页数：7 Pages

RENESAS

瑞萨

Current Transducer

文件：929.58 Kbytes 页数：12 Pages

LEM

莱姆

Current Transducer

文件：1.33861 Mbytes 页数：15 Pages

LEM

莱姆

Wire Basket Tray System Cable Management

Features • T-weld construction prevents snags • 5mm round wire on smaller sizes • 6mm round wire on larger sizes • High load rating • Easy to cut and fabricate fittings in the field • 100 recycled steel • Use factory support hardware or fabricate supports on the job site • 2 x 4 mesh open

文件：1.46625 Mbytes 页数：12 Pages

HUBBELL

HUBBELL INCORPORATED