Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A) • Low drive current • High speed switching • 2.5 V gate drive

文件：91.97 Kbytes 页数：7 Pages

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Current Transducer

文件：929.58 Kbytes 页数：12 Pages

LEM

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Current Transducer

文件：1.33861 Mbytes 页数：15 Pages

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Silicon Schottky Barrier Diode for Rectifying

Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

文件：72.39 Kbytes 页数：6 Pages

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