Silicon N Channel MOS FET Power Switching

Features ● Low on-resistance RDS(on) = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) ● Low drive current ● High speed switching ● 4.5 V gate drive

文件：89.4 Kbytes 页数：7 Pages

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Silicon N Channel MOS FET Power Switching

文件：103.06 Kbytes 页数：7 Pages

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DC/DC Converters

[XPiQ] 1 Watt IE Series DC/DC Converters • 0.12 in2 Board Space • 80 Efficiency • 22 Watts per in3 • 3.3, 5, 12, 24 and 48 VDC Inputs • 1000/3000 VDC Isolation • Industry Standards Pinouts

文件：376.33 Kbytes 页数：2 Pages

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DC/DC Converters

[XPiQ] 1 Watt IE Series DC/DC Converters • 0.12 in2 Board Space • 80 Efficiency • 22 Watts per in3 • 3.3, 5, 12, 24 and 48 VDC Inputs • 1000/3000 VDC Isolation • Industry Standards Pinouts

文件：376.33 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

DC/DC Converters

[XPiQ] 1 Watt IE Series DC/DC Converters • 0.12 in2 Board Space • 80 Efficiency • 22 Watts per in3 • 3.3, 5, 12, 24 and 48 VDC Inputs • 1000/3000 VDC Isolation • Industry Standards Pinouts

文件：376.33 Kbytes 页数：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商