HGTG15N120C3D中文资料35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode数据手册Renesas规格书

描述 Description

The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150°C.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145.

特性 Features

• 35A, 1200V at TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time at TJ = 150°C . . . . . . . . . . . . . . 350ns
• Short Circuit Rating
• Low Conduction Loss