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HGT1S12N60A4DS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGT1S12N60A4DS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGT1S12N60A4S

600V,SMPSSeriesN-ChannelIGBT

TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    HGT1S12N60A4D

  • 功能描述:

    IGBT 晶体管 12A 600V N-Ch

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
TO-263
1471
原厂订货渠道,支持BOM配单一站式服务
询价
onsemi/安森美
新批次
TO-263
4500
询价
INTERSIL
05+
原厂原装
4477
只做全新原装真实现货供应
询价
Fairchild
23+
TO-3P
7750
全新原装优势
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
1844+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
安森美
21+
12588
原装现货,价格优势
询价
三年内
1983
纳立只做原装正品13590203865
询价
FSC/ON
23+
原包装原封 □□
1528
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAI
23+
65480
询价
更多HGT1S12N60A4D供应商 更新时间2024-6-24 8:28:00