HGD Series Drives

TECHNICAL FEATURES Range of operating voltages: 24-75 V, Operation with a single external supply voltage. Range of current: 0.75-6.0 Amp. Setting up to six possible values by means of hardware connections. Microstepping: 400, 800, 1.600 and 3.200 steps /revolution. Setting by means of hardwa

文件：1.94381 Mbytes 页数：2 Pages

RTA

丝印：HGD；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：GD029NE4SL；Package：TO-252；45V N-Ch Power MOSFET

Feature ◇Optimized for high speedswitching,Logic Level ◇Enhanced Body diode dv/dt capability ◇Enhanced Avalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, Halogen Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Pow

文件：830.38 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GD040N06S；Package：TO-252；60V N-Ch Power MOSFET

Feature ◇ Optimized for high speed switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇

文件：1.00335 Mbytes 页数：7 Pages

HUNTECK

恒泰柯半导体

丝印：GD040N06SL；Package：TO-252；60V N-Ch Power MOSFET

Feature ◇Optimized for high speedswitching,Logic Level ◇Enhanced Body diode dv/dt capability ◇Enhanced Avalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, Halogen Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools

文件：900.03 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GD040N06SL；Package：TO-252；60V N-Ch Power MOSFET

Feature ◇Optimized for high speedswitching,Logic Level ◇Enhanced Body diode dv/dt capability ◇Enhanced Avalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, Halogen Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools

文件：900.03 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GD045NE4SL；Package：TO-252；45V N-Ch Power MOSFET

Feature ◇Optimized for high speedswitching,Logic Level ◇Enhanced Body diode dv/dt capability ◇Enhanced Avalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, Halogen Free Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇Power Tools

文件：824.09 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GD053N06S；Package：TO-252；60V N-Ch Power MOSFET

Feature ◇ Optimized for high speed switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇

文件：913.33 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：GI053N06SL；Package：TO-251；60V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and

文件：913.74 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体

丝印：TO-252；Package：GD090N06SL；60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

文件：913.78 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体