8.0 AMPS. Glass Passivated High Efficient Rectifiers

8.0 AMPS. Glass Passivated High Efficient Rectifiers Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free wheeling, and polari

文件：64.239 Kbytes 页数：2 Pages

TSC

台湾半导体

8.0 AMPS. Glass Passivated High Efficient Rectifiers

文件：269.24 Kbytes 页数：2 Pages

TSC

台湾半导体

FRD芯片

• 先进的Photo Glass工艺，从技术上提升了芯片的可靠性。\n\n• 玻璃、Sipos (半绝缘多晶硅）、LTO (低温氧化膜）三层钝化保护，显著提升了芯片的抗高温能力以及封装良率。\n\n• 快速的TRR分布。\n\n• 有竞争性的成本及价格。

Anxin

安芯电子

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

文件：20.27 Kbytes 页数：3 Pages

NTE

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

文件：56.87 Kbytes 页数：8 Pages

NEC

瑞萨