MOS管

HCWSEMI

恒成微

DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching application

文件：193.1 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Dual TrenchMOS logic level FET

文件：251.13 Kbytes 页数：12 Pages

PHI

PHI

N-Channel Enhancement Mode Power MOSFET

Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：611.75 Kbytes 页数：6 Pages

GOFORD

谷峰半导体