G6N02L

Marking：G6N02；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET

Description TheG6N02Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

MMDF6N02HD

PowerMOSFET

MMDF6N02HD

DUALTMOSPOWERMOSFET6.0AMPERES20VOLTS

DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.TheseminiaturesurfacemountMOSFETsfeaturelowRDS(on)andtruelogiclevelperformance.DualHDTMOSdevicesaredesignedforuseinlowvoltage,highspeedswitchingapplication

PHKD6N02LT

DualN-channelTrenchMOSlogiclevelFET

1.1Generaldescription DuallogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits

PHKD6N02LT

DualTrenchMOSlogiclevelFET

WFY6N02

20VN?묬hannelMOSFET