丝印：G6N02；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET

Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：611.75 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

20V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching application

文件：193.1 Kbytes 页数：10 Pages

Motorola

摩托罗拉

Power MOSFET

文件：232.66 Kbytes 页数：10 Pages

ONSEMI

安森美半导体