中低压MOS（20-150V）

HXC-Power

惠海半导体

MOSFET - Power, Single N-Channel, 8FL 100 V, 72 m, 16 A

Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Conduction Losses • High Peak UIS Current Capability for Ruggedness • Small Footprint (3.3 x 3.3 mm) for Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications •

文件：203.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Power MOSFET

Description The G080N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.0175 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04223 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06561 Mbytes 页数：6 Pages

GOFORD

谷峰半导体