H6

型号：AH9486-WUF-7；Package：TSOT26F；SINGLE PHASE LOW NOISE SMART MOTOR DRIVER

Features InternalFullBridgeDriver HighSensitivityIntegratedHallSensor LowandWideSupplyVoltageRangeof2Vto6V SoftSwitchingforLowNoise RotorLockProtectionandAuto-Restart DCVoltageorPWMSignalSpeedControl ThermalProtection TachometerFGOutput(AH94

H6

型号：BZX585-C10；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:≤40W •Totalpowerdissipation:≤300mW •Wideworkingvoltagerange:no

H6

型号：BZX585-C10；Package：SOD523；Voltage regulator diodes

Featuresandbenefits Non-repetitivepeakreversepower dissipation:40W Totalpowerdissipation:300mW AEC-Q101qualified Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) Twotoleranceseries:2and5 Lowdifferentialresistance

H6

型号：MMBZ33VAL；Package：SOT23；Low capacitance unidirectional double ESD protection diodes

Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinacommonanodeconfiguration,encapsulatedinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackage.ThedevicesaredesignedforESDandtransientovervoltageprotectionofuptotwosign

H6

型号：MMBZ33VAL-Q；Package：SOT23；Low capacitance unidirectional double ESD protection diode

1.Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinacommonanode configuration,encapsulatedinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plastic package.ThedeviceisdesignedforESDandtransientovervoltageprotectionofuptotwosi

H6

型号：NC7SV125L6X；Package：MicroPak；TinyLogic ULP-A Buffer with Three-State Output

TheNC7SV125isasinglenon−inverting3−statebufferintiny footprintpackages.ThedeviceisdesignedtooperateforVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •1.0nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSupports

H6

型号：PHFM306；3.0A Surface Mount High Effciency Rectifiers -50V - 1000V

FEATURES *Glasspassivateddevice *Idealforsurfacemountedapplications *Lowleakagecurrent *Metallurgicallybondedconstruction *MoistureSensitivityLevel1 *Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG Halohenfreeproductforpackingcodesuffix

H6

型号：PMN40SNA；Package：SC-74；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •ExtendedtemperaturerangeTj=175°C •TrenchMOSFETte

H6

型号：PUMH19；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open

1.Generaldescription NPN/NPNResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. NPN/PNPcomplement:PUMD19 PNP/PNPcomplement:PUMB19 2.Featuresandbenefits •Built-inbiasresistors •Simplifiedcircuitdesign •Reducesco

H6

型号：PZU3.6BL；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1.Generaldescription General-purposeZenerdiodesinaSOD882leadlessultrasmallSurface-MountedDevice(SMD) plasticpackage. 1.2.Features •Non-repetitivepeakrerversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤250mW •Toleranceseries:B:approximately±5