丝印：H7030L；Package：SOT669；N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100 a

文件：311.46 Kbytes 页数：13 Pages

NEXPERIA

安世