PSMNR70-30YLH中文资料安世数据手册PDF规格书

厂商型号	PSMNR70-30YLH
功能描述	N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology
丝印标识	H7030L
封装外壳	SOT669
文件大小	311.46 Kbytes
页面数量	13 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-23 12:04:00
人工找货	PSMNR70-30YLH价格和库存，欢迎联系客服免费人工找货

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized

for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A,

optimized for DC load switch and hot-swap applications.

2. Features and benefits

• 100 avalanche tested at I(AS) = 190 A

• Optimized for low RDSon

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• Copper-clip for low parasitic inductance and resistance

• High reliability LFPAK package, qualified to 175 °C

• Wave solderable; exposed leads for optimal solder coverage and visual solder inspection

3. Applications

• Hot swap

• e-fuse

• Power OR-ing

• DC switch / Load switch

• Battery protection

• Brushed and BLDC (brushless) motor control

• Synchronous rectification in AC-DC and DC-DC applications