H60

型号：EMH60；Package：EMT6；Complex Digital Transistors (Bias Resistor Built-in Transistors)

H6050S

型号：DMPH6050SK3-TP；Package：SOT-252；P-Channel Enhancement Mode MOSFET

Features *Vos=-60V,lo=-16A Ros52mQ@Vos=-10V(Typ)

H6050SD

型号：DMPH6050SSDQ-13；Package：SO-8；175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Ratedto+175°C–idealforhighambienttemperature environments 100UnclampedInductiveSwitching–ensuresmorereliable androbustendapplication LowRDS(ON)–minimisespowerlosses LowQg–minimisesswitchinglosses TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Ha

H6010LDW

型号：DMTH6010LPDWQ-13；Package：PowerDI5060-8/SWP；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: Enginemanagementsystems Bodycontrolelectronics DC-DCconverters FeaturesandBenefits 

H60EPR7

型号：IKWH60N67PR7；Package：PG-TO247-3-U04；TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Features •VCE=670V •IC=60A •Pin-to-pincreepagedistance>4.8mm •Pin-to-pinclearancedistance>3.4mm •OptimizedmonolithicdiodeforPFCapplications •ImprovedEMIbehaviorwithlowerdv/dt •VerylowVCEsat=1.4V(typ.)at25°C •Stabletemperaturebehavior •Lowtempe

H6025L

型号：PSMNR60-25YLH；Package：SOT669；N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

1.Generaldescription LogiclevelgatedriveN-channelenhancementmodeMOSFETinLFPAK56packageoptimized forlowRDSon.LowIDSSleakageevenwhenhot,highefficiencyandhighcurrent.Ratedto300A, optimizedforDCloadswitchandhot-swapapplications. 2.Featuresandbenefits •100

H60EWR6

型号：IKWH60N65WR6；Package：PG-TO247-3-HCC；The TRENCHSTOP??5 WR6 family in the TO-247-3-HCC package offers improved reliability against package contamination