丝印：H60；Package：EMT6；Complex Digital Transistors (Bias Resistor Built-in Transistors)

文件：690.27 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：H6050S；Package：SOT-252；P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

文件：1.8702 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：H6050SD；Package：SO-8；175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C – ideal for high ambient temperature environments 100 Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimises power losses Low Qg – minimises switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Ha

文件：531.54 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：H6010LDW；Package：PowerDI5060-8/SWP；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: • Engine management systems • Body control electronics • DC-DC converters Features and Benefits •

文件：572.32 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：H60N2D；Package：TO-252；20V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：531.74 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

丝印：H60N3FA；Package：DFN3X3；30V Trench Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • Motor Control

文件：1.02143 Mbytes 页数：6 Pages

HUIXIN

慧芯电子

丝印：H60N4D；Package：TO-252；40V Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：791.2 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

丝印：H60N4FA；Package：DFN3X3；40V Trench N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • Motor Control

文件：450.42 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

丝印：H60N4FB；Package：DFN5X6；40V N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：439.75 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

丝印：H60N6D；Package：TO-252；60V SGT Single N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：604.09 Kbytes 页数：6 Pages

HUIXIN

慧芯电子