丝印：H6；Package：TSOT26F；SINGLE PHASE LOW NOISE SMART MOTOR DRIVER

Features  Internal Full Bridge Driver  High Sensitivity Integrated Hall Sensor  Low and Wide Supply Voltage Range of 2V to 6V  Soft Switching for Low Noise  Rotor Lock Protection and Auto-Restart  DC Voltage or PWM Signal Speed Control  Thermal Protection  Tachometer FG Output(AH94

文件：624.68 Kbytes 页数：12 Pages

DIODES

美台半导体

丝印：H6；Package：SC-79；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Non-repetitive peak reverse power dissipation: ≤ 40 W • Total power dissipation: ≤ 300 mW • Wide working voltage range: no

文件：307.05 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H6；Package：SOD523；Voltage regulator diodes

Features and benefits  Non-repetitive peak reverse power dissipation:  40 W  Total power dissipation:  300 mW  AEC-Q101 qualified  Wide working voltage range: nominal 2.4 V to 75 V (E24 range)  Two tolerance series: 2 and 5  Low differential resistance

文件：901.02 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H6；Package：SOT23；Low capacitance unidirectional double ESD protection diodes

General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two sign

文件：614.94 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H6；Package：SOT23；Low capacitance unidirectional double ESD protection diode

1. General description Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two si

文件：214.39 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H6；Package：MicroPak；TinyLogic ULP-A Buffer with Three-State Output

The NC7SV125 is a single non−inverting 3−state buffer in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 1.0 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IOFF Supports

文件：301.55 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：H6；3.0A Surface Mount High Effciency Rectifiers -50V - 1000V

FEATURES * Glass passivated device * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * Moisture Sensitivity Level 1 * Pb-Free package is available RoHS product for packing code suffix G Halohen free product for packing code suffix

文件：838.54 Kbytes 页数：2 Pages

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰实业有限公司

丝印：H6；Package：SC-74；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Extended temperature range Tj = 175 °C • Trench MOSFET te

文件：288.28 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H6；Package：TSSOP6；50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open

1. General description NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD19 PNP/PNP complement: PUMB19 2. Features and benefits • Built-in bias resistors • Simplified circuit design • Reduces co

文件：221.62 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H6；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1. General description General-purpose Zener diodes in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package. 1.2. Features • Non-repetitive peak rerverse power dissipation: PZSM ≤ 40 W • Total power dissipation: Ptot ≤ 250 mW • Tolerance series: B: approximately ±5

文件：261.269 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司