2Gb DDR3 SDRAM

文件：399.11 Kbytes 页数：33 Pages

Hynix

海力士

2Gb DDR3 SDRAM

文件：399.11 Kbytes 页数：33 Pages

Hynix

海力士

2Gb DDR3 SDRAM

The H5TQ2G43BFR-xxC, H5TQ2G83BFR-xxC and H5TQ2G63BFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations refe • VDD=VDDQ=1.5V +/- 0.075V\r\n• Differential Data Strobe (DQS, /DQS)\r\n• DM masks write data-in at the both rising and falling edges of the data strobe\r\n• Programmable CAS latency 6, 7, 8, 9, 10 and (11) supported\r\n• Programmable CAS Write latency (CWL) = 5, 6, 7, 8\r\n• BL switch on the fly\r;

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DDR3 SDRAM

The H5TQ2G8(6)3FFR-xxI and H5TQ2G8(6)3FFR-xxK are a 2,147,483,648-bit CMOS Double DataRate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to bo • VDD=VDDQ=1.5V +/- 0.075V \n• Fully differential clock inputs (CK, /CK) operation \n• Differential Data Strobe (DQS, /DQS) \n• On chip DLL align DQ, DQS and /DQS transition with CK transition \n• DM masks write data-in at the both rising and falling edges of the data strobe \n• All addresses and co;

SK hynix

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DDR3 SDRAM

The H5TQ2G83GFR-xxC, H5TQ2G63GFR-xxC,H5TQ2G83GFR-xxI, H5TQ2G63GFR-xxI, H5TQ2G83GFRxxL, H5TQ2G63GFR-xxL,H5TQ2G83GFR-xxJ,H5TQ2G63GFR-xxJ are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and hi • VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs excep;

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