丝印：H5A；Package：SOT25；WIDE INPUT VOLTAGE RANGE, 300mA ULDO REGULATOR

Features  Wide Input Voltage Range: 3V to 45V  Maximum Output Current: 300mA  Low Dropout Voltage: VDROP = 35mV@IOUT = 10mA (Typ.) VDROP = 350mV@ IOUT = 100mA (Typ.)  Low Quiescent Current: 2.1μA (Typ.)  Fixed Output Voltages: 1.8V, 3.0V, 3.3V and 5.0V  High Output Voltage Accuracy:

文件：1.6171 Mbytes 页数：18 Pages

DIODES

美台半导体

丝印：H5AQ；Package：SOT89；AUTOMOTIVE COMPLIANT WIDE INPUT VOLTAGE RANGE 300mA ULDO REGULATOR

Features  Wide Input Voltage Range: 3V to 45V  Maximum Output Current: 300mA  Low Dropout Voltage: VDROP = 35mV@IOUT = 10mA (Typ.) VDROP = 350mV@ IOUT = 100mA (Typ.)  Low Quiescent Current: 2.1μA (Typ.)  Fixed Output Voltages: 1.8V, 3.0V, 3.3V and 5.0V  High Output Voltage Accuracy:

文件：1.58 Mbytes 页数：15 Pages

DIODES

美台半导体

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

文件：108.27 Kbytes 页数：4 Pages

MCC

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations re

文件：725.21 Kbytes 页数：45 Pages

Hynix

海力士

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations re

文件：725.21 Kbytes 页数：45 Pages

Hynix

海力士

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations re

文件：725.21 Kbytes 页数：45 Pages

Hynix

海力士

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations re

文件：725.21 Kbytes 页数：45 Pages

Hynix

海力士

4Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations re

文件：725.21 Kbytes 页数：45 Pages

Hynix

海力士