丝印：H5D；Package：SOT25；WIDE INPUT VOLTAGE RANGE, 300mA ULDO REGULATOR

Features  Wide Input Voltage Range: 3V to 45V  Maximum Output Current: 300mA  Low Dropout Voltage: VDROP = 35mV@IOUT = 10mA (Typ.) VDROP = 350mV@ IOUT = 100mA (Typ.)  Low Quiescent Current: 2.1μA (Typ.)  Fixed Output Voltages: 1.8V, 3.0V, 3.3V and 5.0V  High Output Voltage Accuracy:

文件：1.6171 Mbytes 页数：18 Pages

DIODES

美台半导体

丝印：H5DQ；Package：SOT89；AUTOMOTIVE COMPLIANT WIDE INPUT VOLTAGE RANGE 300mA ULDO REGULATOR

Features  Wide Input Voltage Range: 3V to 45V  Maximum Output Current: 300mA  Low Dropout Voltage: VDROP = 35mV@IOUT = 10mA (Typ.) VDROP = 350mV@ IOUT = 100mA (Typ.)  Low Quiescent Current: 2.1μA (Typ.)  Fixed Output Voltages: 1.8V, 3.0V, 3.3V and 5.0V  High Output Voltage Accuracy:

文件：1.58 Mbytes 页数：15 Pages

DIODES

美台半导体

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. FEATURES •VDD, VDDQ= 2.5V +/- 0.2V • All inputs and outputs are compatible with SSTL_2

文件：500.51 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. FEATURES •VDD, VDDQ= 2.5V +/- 0.2V • All inputs and outputs are compatible with SSTL_2

文件：500.51 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falli

文件：500.74 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. FEATURES •VDD, VDDQ= 2.5V +/- 0.2V • All inputs and outputs are compatible with SSTL_2

文件：500.51 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falli

文件：500.74 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. FEATURES •VDD, VDDQ= 2.5V +/- 0.2V • All inputs and outputs are compatible with SSTL_2

文件：500.51 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falli

文件：500.74 Kbytes 页数：28 Pages

Hynix

海力士

256Mb DDR SDRAM

DESCRIPTION The H5DU2562GFR is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. FEATURES •VDD, VDDQ= 2.5V +/- 0.2V • All inputs and outputs are compatible with SSTL_2

文件：500.51 Kbytes 页数：28 Pages

Hynix

海力士