丝印：H51；Package：EMT6；Complex Digital Transistors (Bias Resistor Built-in Transistors)

文件：632.36 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：H5125L；Package：SOT1023；N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100

文件：295.3 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

8 PIN DIP HCMOS

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Connor-Winfield

10MHz, Low Noise, Operational Amplifiers

文件：556.36 Kbytes 页数：10 Pages

Intersil

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文件：1.14365 Mbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Headband

文件：1.14365 Mbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Headband

文件：1.14365 Mbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Headband

文件：1.14365 Mbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1000base -t magnet ics module Designed to Support Gigabit Transceivers

文件：140.92 Kbytes 页数：2 Pages

pulse

1000base -t magnetics module Designed to Support Gigabit Transceivers

文件：140.92 Kbytes 页数：2 Pages

pulse