丝印：H58R；Package：SOT-23(DBV)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Packages • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.6 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.04599 Mbytes 页数：36 Pages

TI

德州仪器

丝印：H58R；Package：SOT-23(DBV)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Packages • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.6 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.04599 Mbytes 页数：36 Pages

TI

德州仪器

丝印：H58R；Package：SOT-23(DBV)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Packages • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.6 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.04599 Mbytes 页数：36 Pages

TI

德州仪器

丝印：H58R；Package：SOT-23(DBV)；LOW-POWER CONFIGURABLE MULTIPLE-FUNCTION GATE

1FEATURES • Available in the Texas Instruments NanoStar™ Packages • Low Static-Power Consumption (ICC = 0.9 mA Max) • Low Dynamic-Power Consumption (Cpd = 4.6 pF Typ at 3.3 V) • Low Input Capacitance (Ci = 1.5 pF Typ) • Low Noise – Overshoot and Undershoot

文件：2.04599 Mbytes 页数：36 Pages

TI

德州仪器