丝印：H5125L；Package：SOT1023；N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated to 380 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100

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