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H1009101V

防护口罩

Honeywell

霍尼韦尔

HAF1009

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件:113.11 Kbytes 页数:10 Pages

RENESAS

瑞萨

HAF1009L

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件:113.11 Kbytes 页数:10 Pages

RENESAS

瑞萨

HAF1009S

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件:113.11 Kbytes 页数:10 Pages

RENESAS

瑞萨

技术参数

  • 型号:

    H1009101V

  • 颜色:

    白色

  • 佩戴方式:

    耳带式

  • 防护级别:

    KN95

  • 款式:

    折叠式

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更多H1009供应商 更新时间2021-9-14 10:50:00