丝印：H10N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

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顺烨电子

丝印：H10N65ANV；Package：TO-3P；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.32761 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：H10N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：3.32761 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：H10N65ANW；Package：TO-247；650V N-Channel Planar MOSFET

Features RDSON≤ 1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical33 .4nC) ⚫ Low Crss (typical typical1.04 pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply(UPS)  Power

文件：2.79466 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H10N70ANF；Package：TO-220F；700V N-Channel Planar MOSFET

Features RDSON≤ 1.1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical34 nC) ⚫ Low Crss (typical typical1.3pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.79897 Mbytes 页数：11 Pages

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顺烨电子

丝印：H10N70ANP；Package：TO-220；700V N-Channel Planar MOSFET

Features RDSON≤ 1.1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical34 nC) ⚫ Low Crss (typical typical1.3pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.79897 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H10N70ANV；Package：TO-3P；700V N-Channel Planar MOSFET

Features RDSON≤ 1.1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical34 nC) ⚫ Low Crss (typical typical1.3pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.79897 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H10N70ANW；Package：TO-247；700V N-Channel Planar MOSFET

Features RDSON≤ 1.1Ω @ Vgs=10 V, Id= 5A ⚫ UltraLow gate Charge(typical typical34 nC) ⚫ Low Crss (typical typical1.3pF) ⚫ Fast switching capability ⚫ 100 avalanche tested ⚫ Improved dv/ dt capability Applications  Switch Mode Power Supply (  Uninterruptible Power Supply (  Power Facto

文件：2.79897 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H1040；Package：SOIC；LOW-POWER CAN TRANSCEIVER WITH BUS WAKE-UP

1FEATURES • Improved Drop-in Replacement for the TJA1040 • ±12 kV ESD Protection • Low-Current Standby Mode with Bus Wake-up: 5 μA Typical • Bus-Fault Protection of –27 V to 40 V • Rugged Split-Pin Bus Stability • Dominant Time-Out Function • Thermal Shutdown Removed • Power-Up/Down Glit

文件：631.65 Kbytes 页数：28 Pages

TI

德州仪器

丝印：H1040；Package：SOIC(D)；LOW-POWER CAN TRANSCEIVER WITH BUS WAKE-UP

1FEATURES • Improved Drop-in Replacement for the TJA1040 • ±12 kV ESD Protection • Low-Current Standby Mode with Bus Wake-up: 5 μA Typical • Bus-Fault Protection of –27 V to 40 V • Rugged Split-Pin Bus Stability • Dominant Time-Out Function • Thermal Shutdown Removed • Power-Up/Down Glit

文件：631.95 Kbytes 页数：28 Pages

TI

德州仪器