丝印：H1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

文件：268.92 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：H1；Package：SOT23；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCW71 and BCW72.

文件：317.56 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H1；Package：SOT23；PNP general purpose transistors

1. General description PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 100 mA) • Low voltage (max. 45 V) • AEC-Q101 qualified 3. Applications • General purpose switching and amplification

文件：203.48 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H1；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：742.14 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：H1；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：2.05751 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：H1；Package：SC-79；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD523 (SC-79) ultra small flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Non-repetitive peak reverse power dissipation: ≤ 40 W • Total power dissipation: ≤ 300 mW • Wide working voltage range: no

文件：307.05 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H1；Package：SOD523；Voltage regulator diodes

Features and benefits  Non-repetitive peak reverse power dissipation:  40 W  Total power dissipation:  300 mW  AEC-Q101 qualified  Wide working voltage range: nominal 2.4 V to 75 V (E24 range)  Two tolerance series: 2 and 5  Low differential resistance

文件：901.02 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：H1；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：H1；Package：uQFN-5L；4-line ESD protection for high speed lines

Description The HSP051-4M5 and HSP053-4M5 are a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. The device is packaged in μQFN 1.3 mm x 0.8 mm with a 500 μm pitch. Features • Very compact 500 µm pitch package, f

文件：2.3742 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：H1；Package：SOT-26；General purpose (dual digital transistors)

Features 1) Two DTC124E chips in a EMT or UMT or SMT package.

文件：67.33 Kbytes 页数：2 Pages

ROHM

罗姆