2SJ648分立半导体产品的晶体管-FETMOSFET-单个规格书PDF中文资料

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SJ648 is a switching device which can be driven directly by a

2.5 V power source.

The 2SJ648 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)

RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)

RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)