Low thermal resistance

文件：1.91768 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30H60DF；Package：TO-247；600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.95033 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30H60DFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency convert

文件：1.43779 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30H60DLFB；Package：TO-247；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency conve

文件：1.74476 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30N120KD；Package：TO-247；30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 μs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ p

文件：423.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；30 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

文件：545.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH??IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antip

文件：280.18 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30H65FB；Package：TO-247；Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

文件：1.69367 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH??IGBT

文件：306.03 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30V60F；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

文件：1.47767 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体