1350V /30A Trench Field Stop IGBT

FEATURES  High breakdown voltage to 1350V for improved reliability  Trench-Stop Technology offering :  Very tight parameter distribution  High ruggedness, temperature stable  Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)  Enhanced avalanche c

文件：1.22175 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH-TM IGBT

Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high sw

文件：109.87 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT

Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high sw

文件：295.75 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - short circuit rugged IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10

文件：349 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

30 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

文件：545.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

30 A - 1200 V - short circuit rugged IGBT

文件：359.23 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

文件：159.35 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT

文件：305.6 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

文件：411.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT

文件：306.18 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体