30 A - 600 V - short circuit rugged IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10

文件：349 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - short circuit rugged IGBT

ST

意法半导体

N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

文件：411.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT

文件：306.18 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

30 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

文件：545.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体