N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH??IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Features ■ Low CRES/ CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode

文件：340.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

文件：285.3 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH??IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Features ■ Low CRES/ CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode

文件：340.86 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

文件：285.3 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；N-channel 40A - 600V - TO-247 Very fast switching PowerMESH??IGBT

文件：323.36 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW39NC60VD；Package：TO-247；40 A - 600 V - very fast IGBT

文件：391.02 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH™ IGBT

ST

意法半导体