30 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

文件：545.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；30 A, 600 V ultra fast IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery

文件：545.13 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH??IGBT

Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antip

文件：280.18 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：GW30NC60WD；Package：TO-247；N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH??IGBT

文件：306.03 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体