650V/75A Trench Field Stop IGBT

Features 650V 75A,VCE(sat)(typ.) = 2.3V Field Stop IGBT Technology 10μs Short Circuit Capability Square RBSOA Positive VCE (on) Temperature Coefficient.

文件：1.32363 Mbytes 页数：9 Pages

LUGUANG

鲁光电子

650V /75A Trench Field Stop IGBT

FEATURES  High breakdown voltage up to 650V for improved reliability  Trench-Stop Technology offering :  High speed switching  High ruggedness, temperature stable  Short circuit withstand time – 5s  Low VCEsat  Easy parallel switching capability due to positive temperature coeffic

文件：1.03672 Mbytes 页数：7 Pages

LUGUANG

鲁光电子

650V/75A Trench Field Stop IGBT

Features  650V 75A,VCE(sat)(typ.) = 1.70 V@75A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

文件：1.49361 Mbytes 页数：7 Pages

LUGUANG

鲁光电子

650V /75A Trench Field Stop IGBT

文件：1.1204 Mbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel Super Junction Power MOSFET

文件：491.84 Kbytes 页数：6 Pages

HMSEMI

华之美半导体