丝印：HMS75N65T；Package：TO-247；N-Channel Super Junction Power MOSFET

文件：491.84 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

650V Trench Gate/Field Stop Process

Features 650V Trench Gate/Field Stop Process Low switching losses positive temperature coefficient Applications Charging pile ups solar energy converter

文件：2.15955 Mbytes 页数：6 Pages

GWSEMI

唯圣电子

180mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 180mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.02335 Mbytes 页数：15 Pages

DINTEK

尚鼎芯

180mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 180mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.02335 Mbytes 页数：15 Pages

DINTEK

尚鼎芯

SUPERIOR GaN DTQ75N65GS – 180mΩ, 650V GaN HEMT

• 650V, 180mΩenhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface circuit • Dir

文件：2.16996 Mbytes 页数：17 Pages

DINTEK

尚鼎芯