650V Trench Gate/Field Stop Process

Features 650V Trench Gate/Field Stop Process Low switching losses positive temperature coefficient Applications Charging pile ups solar energy converter

文件：2.15955 Mbytes 页数：6 Pages

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180mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 180mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.02335 Mbytes 页数：15 Pages

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650V /75A Trench Field Stop IGBT

文件：1.1204 Mbytes 页数：7 Pages

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华之美半导体

N-Channel Super Junction Power MOSFET

文件：491.84 Kbytes 页数：6 Pages

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