N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

文件：159.35 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

ST

意法半导体

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

文件：304 Kbytes 页数：12 Pages

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

文件：356.25 Kbytes 页数：12 Pages

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌