丝印：H30R90；Package：PG-TO-247-3；Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

文件：304 Kbytes 页数：12 Pages

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌

Trench Field-Stop Technology IGBT

FEATURES · Low Saturation Voltage:VCE(sat)= 1.7V@IC= 30A · Easy Parallel Switching Capability Due to Positive · Pb-free Lead Plating, RoHS Compliant APPLICATIONS · Microwave Oven · ASoft Switching Applications for ZCS

文件：312.89 Kbytes 页数：3 Pages

ISC

无锡固电

Reverse Conducting IGBT with monolithic body diode

文件：356.25 Kbytes 页数：12 Pages

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

文件：304 Kbytes 页数：12 Pages

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 900V 60A 454W TO247-3

Infineon

英飞凌