Thermally-Enhanced High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 ??3100 MHz

文件：463.24 Kbytes 页数：5 Pages

CREE

科锐

High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz

Broadband internal input matching Typical pulsed CW performance (class AB); 2700 – 3100 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 180 W; Drain efficiency = 70%; Gain (P3dB) = 15 dB Pb-free and RoHS compliant • Broadband internal input matching\n•Pb-free and RoHS compliant \n;

MACOM