High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz

Broadband internal input matching Typical pulsed CW performance (class AB); 2700 – 3100 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power at P3dB = 180 W; Drain efficiency = 70%; Gain (P3dB) = 15 dB Pb-free and RoHS compliant • Broadband internal input matching\n•Pb-free and RoHS compliant \n;

MACOM