High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz

The GTVA263202FC is a 340-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced surface-mount package with earless flange.\n\n ·Typical Pulsed CW performance; 2690 MHz, 48 V, combined outputs\n·Output power P3dB 340 W\n·Efficiency 70 %\n·Gain 16 dB\n·Capable of handling 10:1 VSWR @ 48 V, 80 W (CW) output power\n·Pb-free and RoHS compliant\n·Input matched\n;

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Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz

Description The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange Features • Ga

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Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz

Description The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange Features • Ga

文件：632.59 Kbytes 页数：8 Pages

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Package：H-37248-4；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF SIC HEMT 340W,2620 - 2690MHZ

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Package：H-37248-4；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF SIC HEMT 340W,2620 - 2690MHZ

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