GTVA263202FC-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

GTVA263202FC-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的GTVA263202FC-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and

a thermally-enhanced surface-mount package with earless flange

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P3dB = 340 W

- Drain efficiency = 70

- Gain = 16 dB

• Capable of handling 10:1 VSWR @48 V, 80 W (CW)

output power

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant