GTVA261802FC-V1-R2分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

GTVA261802FC-V1-R2属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的GTVA261802FC-V1-R2晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

描述 Description

The GTVA261802FC is a 170-watt GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

特性 Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, combined outputs,

2690 MHz, 48 V, 10 µs pulse width, 10 duty cycle

- Output power at P3dB = 170 W

- Drain Efficiency at P3dB = 65.5

- Gain at P3dB = 15 dB

• Capable of handling 10:1 VSWR @ 48 V, 180 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant