Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz

文件：489 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features • GaN on

文件：506.78 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features • GaN on

文件：506.76 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Features • GaN on

文件：506.76 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz

文件：489 Kbytes 页数：8 Pages

CREE

科锐

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz

文件：489 Kbytes 页数：8 Pages

CREE

科锐

High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz

The GTVA262701FA is a 270-watt GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. ·Typical Pulsed CW performance; 2690 MHz; 48 V, 10% duty cycle\n·Output power P3dB 270 W\n·Efficiency 66 %\n·Gain 18.1 dB\n·Capable of handling 10:1 VSWR @ 48 V, 60 W (WCDMA) output power\n·Pb-free and RoHS compliant\n·Input matched;

MACOM

Package：H-87265J-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：270W, GAN HEMT, 48V, 2496-2690MH

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Package：H-87265J-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：270W, GAN HEMT, 48V, 2496-2690MH

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