GTVA262701FA_V2

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description TheGTVA262701FAisa270-wattGaNonSiChighelectronmobility transistor(HEMT)foruseinmulti-standardcellularpoweramplifier applications.Itfeaturesinputmatching,highefficiency,anda thermally-enhancedsurface-mountpackagewithearlessflange. Features •GaNon

GTVA262701FA-V2

High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz; ·Typical Pulsed CW performance; 2690 MHz; 48 V, 10% duty cycle\n·Output power P3dB 270 W\n·Efficiency 66 %\n·Gain 18.1 dB\n·Capable of handling 10:1 VSWR @ 48 V, 60 W (WCDMA) output power\n·Pb-free and RoHS compliant\n·Input matched\n;

The GTVA262701FA is a 270-watt GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.\n\n

GTVA262701FA-V2-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description TheGTVA262701FAisa270-wattGaNonSiChighelectronmobility transistor(HEMT)foruseinmulti-standardcellularpoweramplifier applications.Itfeaturesinputmatching,highefficiency,anda thermally-enhancedsurface-mountpackagewithearlessflange. Features •GaNon

GTVA262701FA-V2-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

Description TheGTVA262701FAisa270-wattGaNonSiChighelectronmobility transistor(HEMT)foruseinmulti-standardcellularpoweramplifier applications.Itfeaturesinputmatching,highefficiency,anda thermally-enhancedsurface-mountpackagewithearlessflange. Features •GaNon

GTVA262701FA-V2-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz

GTVA262701FA-V2-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz

GTVA262701FA-V2-R0

Package：H-87265J-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：270W, GAN HEMT, 48V, 2496-2690MH

GTVA262701FA-V2-R2

Package：H-87265J-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：270W, GAN HEMT, 48V, 2496-2690MH