High Power RF GaN on SiC HEMT 700 W, 50 V, 960 – 1215 MHz

Input matchedTypical pulsed CW performance (class AB); 1030 MHz; 50 V; 128 μs pulse width; 10% duty cycle; Output power P3dB = 890 W; Drain efficiency = 75%; Gain = 18 dBCapable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA ID • Input matched \n•Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA IDQ;128 μs pulse width; 10% duty cycle\n•Pb-free and RoHS-compliant ;

MACOM

High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10

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High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10

文件：638.73 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

文件：253.63 Kbytes 页数：8 Pages

Cree

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Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

文件：253.63 Kbytes 页数：8 Pages

Cree

科锐

Package：SOT-957A；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：700W GAN HEMT 50V 0.9-1.2GHZ FET

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Package：SOT-957A；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：700W, GAN HEMT, 50V, 0.9-1.2GHZ,

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