GTVA107001EC-V1-R2

High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz

Description TheGTVA107001ECandGTVA107001FCare700-wattGaNonSiChighelectronmobilitytransistors(HEMT)foruseintheDC-1.4GHzfrequecyband. Features •GaNonSiCHEMTtechnology •Inputmatched •TypicalpulsedCWperformance(classAB),1030MHz, 50V,128µspulsewidth,10

GTVA107001EC-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 ??1215 MHz

GTVA107001EC-V1-R250

Package：SOT-957A；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：700W, GAN HEMT, 50V, 0.9-1.2GHZ,