High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz

The GTRA263902FC is a 370-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange. ·Typical pulsed CW performance: 2690 MHz; 48 V; combined outputs\n·Output power at P3dB 370 W\n·Efficiency 70%\n·Gain 15 dB\n·Capable of handling 10:1 VSWR @48 V; 56 W (CW) output power\n·Low thermal resistance\n·Pb-free and RoHS compliant\n·Input matched;

MACOM

Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz

Description The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：531.41 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz

Description The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：531.41 Kbytes 页数：8 Pages

WOLFSPEED

Package：H-37248C-4；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：390W, GAN HEMT, 48V, 2496-2690MH

WOLFSPEED

Package：H-37248C-4；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：390W, GAN HEMT, 48V, 2496-2690MH

WOLFSPEED