零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Highaccuracydetection,Ultra-lowcurrentconsumption Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Highaccuracydetection,Ultra-lowcurrentconsumption Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSStandardCMOS | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
P-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
DualPChannelEnhancementModeMOSFET | booklyShanghai Baili Microelectronics Co., Ltd 百力微电子上海百力微电子股份有限公司 | bookly | ||
DualP-ChannelEnhancementModeMOSFET FEATURES ■-30V,-4.9A,RDS(ON)=53mΩ@VGS=-10V. -3.6A,RDS(ON)=95mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualP-Channel30-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
DualP-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-4.5A,RDS(ON)=58mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualP-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-4.5A,RDS(ON)=64mΩ@VGS=-10V. RDS(ON)=95mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplating;RoHScompliant. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualP-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT4.9Ampere FEATURE *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. *Smallflatpackage.(SO-8) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrive | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
P-Channel30-V(D-S)MOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
YGMOS |
23+ |
SOP-8 |
59800 |
全新原装现货样品可出 |
询价 | ||
YGMOS |
36118 |
SOP-8 |
2015 |
专业代理MOS管,型号齐全,公司优势产品 |
询价 | ||
GT |
24+ |
SOP8 |
5000 |
全现原装公司现货 |
询价 | ||
GT |
1726+ |
SOP8 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
YGMOS |
23+ |
SOP-8 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
GT |
21+ |
SOP8 |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
YGMOS |
20 |
SOP8 |
90000 |
原装正品,假一赔十 |
询价 | ||
YGMOS |
2018+ |
SOP-8 |
13692 |
MOS管大量供应优势产品 |
询价 | ||
GT |
2020+ |
SOP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
NA |
SOP8 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 |
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