Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead-free plating ; RoHS compliant.

文件：430.04 Kbytes 页数：4 Pages

CET

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P Channel MOSFET

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Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4.9 Ampere FEATURE * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. * Small flat package. (SO-8 ) APPLICATION * Servo motor control. * Power MOSFET gate drive

文件：205.17 Kbytes 页数：2 Pages

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P-Channel 30-V(D-S) MOSFET

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文件：1.36658 Mbytes 页数：3 Pages

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